Fabrication and characterization of epitaxial MgO thin films on Si substrates

Key Engineering Materials

Volumn 169, Issue , 1999, Pages 167-170

  Senzaki, J ^a   Ueno, T ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; MAGNESIA; MORPHOLOGY; SILICON WAFERS; SPUTTERING; THIN FILMS; VOLTAGE MEASUREMENT;

INTERFACE TRAP DENSITY;

CERAMIC COATINGS;

EID: 0032650307     PISSN: 10139826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. J.L. Moll and Y. Tarui: IEEE Trans. Electron Devices, 10 (1963), p.338
2. T.D. Clark, R.J. Prance and A.D.C. Grassie: J. Appl. Phys., 51 (1980), p.2736
3. J. Senzaki, K. Kurihara, N. Nomura, O. Mitsunaga, Y. Iwasaki and T. Ueno: Jpn. J. Appl. Phys. 37 (1998), p.5150
4. J. Senzaki, O. Mitsunaga, T. Uchida, T. Ueno and K. Kuroiwa: Jpn. J. Appl. Phys. 35 (1996), p.4195