Electrical characterization of dielectrically isolated silicon substrates containing buried metallic layers

IEEE Electron Device Letters

Volumn 18, Issue 5, 1997, Pages 232-234

  Goh, W L ^b,c   Montgomery, J H ^b   Raza, S H ^b   Armstrong, B M ^a,b   Gamble, H S ^b  

^a IEEE

^b QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; SEMICONDUCTING SILICON; SUBSTRATES; TUNGSTEN COMPOUNDS;

BURIED METALLIC LAYERS;

MOS DEVICES;

EID: 0031139635     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.568777     Document Type: Article

References (9)

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