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Electronics Letters

Volumn 35, Issue 15, 1999, Pages 1280-1281

Ohmic contact to p-ZnSe and p-ZnMgSSe

(6) Chang, S J a Chen, W R a Su, Y K a Tu, R C a Lan, W H b Chang, H b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR LASERS;

SPECIFIC CONTACT RESISTANCE; TRANSMISSION LINE METHOD; VOLTAGE STRESS;

OHMIC CONTACTS;

EID: 0032649557 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:19990835 Document Type: Article

Times cited : (9)

References (7)

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