Low temperature growth of p-type crystalline silicon films by ECR plasma CVD

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 571-574

  Wang, Licai ^a   Reehal, H S ^a  

^a LONDON SOUTH BANK UNIVERSITY   (United Kingdom)

Author keywords

Epitaxy; Plasma processing and deposition; Raman scattering; Rutherford backscattering spectroscopy; Silicon; X ray diffraction

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; FILM GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; X RAY CRYSTALLOGRAPHY;

MICROCRYSTALLINE MATERIALS;

SEMICONDUCTING FILMS;

EID: 0032648684     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01697-6     Document Type: Article

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