Dielectric properties of (K0.4Na0.6)2(Sr0.6Ba0.4)4Nb10O30 thin films fabricated by RF magnetron sputtering method

Solid State Communications

Volumn 111, Issue 3, 1999, Pages 125-129

  Park, G ^a   Sel, J ^a   Bu, S ^b   Song, I H ^a  

^a Sogang University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; DIELECTRIC PROPERTIES OF SOLIDS; FERROELECTRIC MATERIALS; HIGH TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; POTASSIUM COMPOUNDS; SPUTTER DEPOSITION; SUBSTRATES; THIN FILMS;

MORPHOTROPIC PHASE BOUNDARY (MPB); POTASSIUM SODIUM STRONTIUM BARIUM NIOBATE;

DIELECTRIC FILMS;

EID: 0032648548     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00187-8     Document Type: Article

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