Electrical properties of Schottky contacts of TiW on RTCVD Si1-x-yGexCy films

Materials Research Society Symposium - Proceedings

Volumn 470, Issue , 1997, Pages 121-126

  Mi, Jian ^a   Zhang, Yilu ^a   Warren, Patricia ^a   Yang, Cary Y ^a  

^a SANTA CLARA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE MEASUREMENT; EPITAXIAL GROWTH; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; TITANIUM ALLOYS;

RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

HETEROJUNCTIONS;

EID: 0031333535     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-470-121     Document Type: Conference Paper

References (15)