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Physica Status Solidi (B) Basic Research

Volumn 211, Issue 1, 1999, Pages 247-253

Time-resolved photoluminescence study of GaAs/ordered GaInP interface under high pressure

(5) Kobayashi, T a Matsui, A a Ohmae, T a Uchida, K b Nakahara, J c

a KOBE UNIVERSITY (Japan)

b UNIVERSITY OF ELECTRO COMMUNICATIONS (Japan)

c HOKKAIDO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032646252 PISSN: 03701972 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-3951(199901)211:1<247::AID-PSSB247>3.0.CO;2-S Document Type: Article

Times cited : (6)

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