Slow and fast positron studies of defects created in silicon by swift Kr ions

Applied Surface Science

Volumn 149, Issue 1, 1999, Pages 181-187

  Liszkay, L ^a   Havancsak K ^b   Kajcsos, Zs ^a  

^a WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^b EÖTVÖS LORÁND UNIVERSITY   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DOPPLER EFFECT; ION IMPLANTATION; IRRADIATION; KRYPTON; LATTICE CONSTANTS; POSITRONS; RADIATION DAMAGE; SINGLE CRYSTALS;

COINCIDENCE DOPPLER MEASUREMENTS; POSITRON TRAPPING; ZERO ANISOTROPY POINT;

SEMICONDUCTING SILICON;

EID: 0032645533     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00197-X     Document Type: Article

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