0.1μm high performance metamorphic in0.32Al0.68As/In0.33Ga0.67as HEMT on GaAs using inverse step InAlAs buffer

Electronics Letters

Volumn 35, Issue 19, 1999, Pages 1670-1671

  Zaknoune, M ^a   Cordier, Y ^a   Bollaert, S ^a   Ferre, D ^a   Theron D ^a   Crosnier, Y ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

INDIUM ALUMINUM ARSENIDE; INVERSE STEP METAMORPHIC BUFFERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032645445     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991030     Document Type: Article

References (9)

1. ZAKKOUNE, M., BONTE, B., GAQUIERE, C., CORDIER, Y., DRUELLE, Y., THéRON, D., and CROSNIER, Y.: 'A InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage', IEEE Electron Device Lett., 1998, 19, (9), pp. 345-347
2. SALMER, G., and CORDIER, Y.: 'Metamorphics: Extending the limits of GaAs'. Proc. 27th European Solid-State Device Research Conf., Stuttgart, September 1997, pp. 77-87
3. 1-xAs epilayers grown on GaAs substrates', J. Appl. Phys., 1996, 79, (11), pp. 8367-8370
4. 1-xAs/GaAs (001) heterostructure', Appl. Phys. Lett., 1995, 66, (7), pp. 869-871
5. CORDIER, Y., DRUELLE, Y., BOLLAERT, S., CAPPY, A., TRUDEL, S., DIPERSIO, J., and FERRÉ, D.: 'MBE grown AlInAs/GaInAs lattice mismatched layers for HEMT application on GaAs substrate'. Proc. 39th Electronic Materials Conf., Fort Collins, June 1997
6. CORDIER, Y., ZAKNOUNE, M., and BOLLAERT, S.: 'MBE growth AlInAs/GaInAs lattice relaxed layers for HEMT application on GaAs substrate'. Proc. 40th Electronic Materials Conf., Charlottesville, June 1998
7. WAKITY, A.S., ROHDIN, H., ROBBINS, V.M., MOLL, N., SU, C.-Y., NAGY, A., and BASILE, D.P.: 'Low-noise bias reliability of AlInAs/GaInAs MODFETs with linearly graded low-temperature layers grown on GaAs substrates'. Proc. 10th Int. Conf. Indium Phosphide and Related Materials, Tsukuba, May 1998, pp. 223-226
8. 0.67As HEMT's on GaAs substrate with an inverse step InAlAs metamorphic buffer'. Proc. 56th Device Research Conf., Charlottesville, June 1998, pp. 35-36
9. FOURRE, H., DIETTE, F., and CAPPY, A.: 'Selective wet etching of lattice matched InGaAs/InAlAs and metamorphic InGaAs/InAlAs on GaAs using succinic acid /hydrogen peroxide solution', J. Vac. Sci. Tech., Sep./Oct. 1996, B14, pp. 3400-3402