Thickness control of the amorphous buffer layer of hydrogenated nanocrystalline silicon: Effect of the dopant concentration

Solid State Phenomena

Volumn 67, Issue , 1999, Pages 137-142

  Gourbilleau, F ^a   Achiq, A ^a   Voivenel, P ^a   Rizk, R ^a  

^a LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLIZATION; HYDROGENATION; NANOSTRUCTURED MATERIALS; PLASMA APPLICATIONS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILANES; SPUTTER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY;

HYDROGENATED NANOCRYSTALLINE SILICON FILMS;

SEMICONDUCTING SILICON;

EID: 0032642183     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.67-68.137     Document Type: Article

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