Suppression of hexagonal GaN mixing by As4 molecular beam in cubic GaN growth on GaAs (0 0 1) substrates

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 392-395

  Hashimoto, Akihiro ^a   Motizuki, Takanori ^a   Wada, Hideki ^a   Masuda, Atsushi ^b   Yamamoto, Akio ^a  

^a UNIVERSITY OF FUKUI   (Japan)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; MIXING; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SUBSTRATES;

MOLECULAR BEAM IRRADIATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032641864     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01356-6     Document Type: Article

References (4)

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2. Yoshikawa A., Qin Z., Nagano H., Sugure Y., Jia A., Kobayashi M., Kato Y., Takahashi K. Mater. Sci. Forum. 264-268:1998;1221.
3. Tsuchiya H., Sunada K., Suemasu T., Hasegawa F. J. Crystal Growth. 189/190:1998;395.
4. Nagano H., Qin Z., Jia A., Kato Y., Kobayashi M., Yoshikawa A., Takahashi K. J. Crystal Growth. 189/190:1998;265.