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Volumn 32, Issue 15, 1999, Pages 1857-1869
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Model of capacitively coupled radio-frequency methane/hydrogen plasmas for III-V semiconductor etching applications
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC EXCITATION;
ELECTRON ENERGY LEVELS;
ELECTRONS;
FLUXES;
HYDROGEN;
IONIZATION;
IONS;
MATHEMATICAL MODELS;
METHANE;
MOLECULAR VIBRATIONS;
REACTIVE ION ETCHING;
SURFACES;
ELECTRON ENERGY DISTRIBUTION FUNCTIONS;
ION FLUXES;
IONIZATION DISTRIBUTION FUNCTION;
SECONDARY ELECTRON EMISSION COEFFICIENT;
SPATIAL IONIZATION DISTRIBUTION;
PLASMAS;
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EID: 0032641223
PISSN: 00223727
EISSN: None
Source Type: Journal
DOI: 10.1088/0022-3727/32/15/314 Document Type: Article |
Times cited : (4)
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References (49)
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