The modelling of radio frequency hydrogen plasmas in the reactive ion etching of GaAs

Journal of Physics D: Applied Physics

Volumn 30, Issue 23, 1997, Pages 3187-3196

  Layberry, R L ^a   Pearce, C G ^a   Sullivan, J L ^a  

^a ASTON UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HYDROGEN; PLASMA COLLISION PROCESSES; PLASMA SHEATHS; PLASMA SIMULATION; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

RADIOFREQUENCY HYDROGEN PLASMAS;

PLASMA ETCHING;

EID: 0031558888     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/30/23/002     Document Type: Article

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