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Volumn 28, Issue 5, 1999, Pages 528-531
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Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)
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Author keywords
[No Author keywords available]
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Indexed keywords
ARSENIC;
ATOMIC FORCE MICROSCOPY;
MOLECULAR BEAM EPITAXY;
PARTIAL PRESSURE;
PHOTOLUMINESCENCE;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SUBSTRATES;
TEMPERATURE;
BIMODAL DISTRIBUTION;
DOUBLE PEAK STRUCTURE;
EXCITATION INTENSITY DEPENDENCE;
PHOTOLUMINESCENCE SPECTRA;
QUANTUM SIZE EFFECT;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0032640194
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-999-0106-y Document Type: Article |
Times cited : (7)
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References (18)
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