Quantitative determination of borophosphosilicate glass thin-film properties using infrared emission spectroscopy

Applied Spectroscopy

Volumn 53, Issue 7, 1999, Pages 822-828

  Niemczyk, Thomas M ^a   Zhang, Songbiao ^a,c   Franke, James E ^a,d   Haaland, David M ^b  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c UNIVERSITY OF MASSACHUSETTS MEDICAL SCHOOL   (United States)

^d Rio Grande Medical Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; BORON COMPOUNDS; CHEMICAL ANALYSIS; CHEMICAL VAPOR DEPOSITION; GLASS; INFRARED SPECTROSCOPY; LEAST SQUARES APPROXIMATIONS; MONITORING; PHOSPHORUS; SILICON WAFERS; TEMPERATURE;

BOROPHOSPHOSILICATE GLASS THIN FILMS; CROSS VALIDATED STANDARD ERRORS OF PREDICTION; IN-SITU MONITORING; INFRARED EMISSION SPECTROSCOPY; PARTIAL LEAST SQUARES; SILICON MONITOR WAFERS; SPECTRAL RESOLUTION;

THIN FILMS;

EID: 0032640187     PISSN: 00037028     EISSN: None     Source Type: Journal    
DOI: 10.1366/0003702991947397     Document Type: Article

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