(N11)A GaAs: A preferable platform for high quality GaAs/AlGaAs structures

Microelectronics Journal

Volumn 30, Issue 4, 1999, Pages 323-328

  Shtrikman, H ^a   Hanien, Y ^a   Soibel, A ^a   Meirav, U ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; HOLE TRAPS; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON GAS STRUCTURES; HOLE GAS STRUCTURES;

HETEROJUNCTIONS;

EID: 0032639731     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(98)00127-X     Document Type: Article

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