Mechanical stress characterization of shallow trench isolation by Kelvin probe force microscopy

Materials Research Society Symposium - Proceedings

Volumn 568, Issue , 1999, Pages 245-250

  Rueda, Hernan ^a   Slinkman, James ^b   Chidambarrao, Dureseti ^b   Moszkowicz, Leon ^b   Kaszuba, Phil ^b   Law, Mark ^a  

^a University of Florida   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ENERGY GAP; FINITE ELEMENT METHOD; SCANNING; STRAIN; STRESS ANALYSIS;

SCANNING KELVIN PROBE FORCE MICROSCOPY (SKPM);

SEMICONDUCTING SILICON;

EID: 0032639201     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-568-245     Document Type: Article

References (8)

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3. T. Hook, J. Slinkman, and S. Biesemans, submitted to IEEE Transactions on Electron Devices (1999).
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