SiO2 etching using high density plasma sources

Thin Solid Films

Volumn 341, Issue 1, 1999, Pages 84-90

  Tsukada, T ^c   Nogami, H ^a   Nakagawa, Y ^a   Wani, E ^a   Mashimo, K ^a   Sato, H ^a   Samukawa, S ^b  

^a Canon ANELVA Technix Corporation   (Japan)

^b NEC CORPORATION   (Japan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATION; EMISSION SPECTROSCOPY; PLASMA DENSITY; PLASMA ETCHING; PLASMA SOURCES; PRESSURE EFFECTS; TEMPERATURE;

HELICON WAVE PLASMA; ION CURRENT DENSITY; ION SATURATION CURRENT; OPTICAL EMISSION SPECTROSCOPY;

SILICA;

EID: 0032638184     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01525-9     Document Type: Article

References (6)

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6. Mayer T.M., Baker R.A. J. Vac. Sci. Technol. 21:1982;757.