The effect of a strong magnetic field on the binding energy and the photoionization cross-section in a quantum well

Journal of Physics Condensed Matter

Volumn 11, Issue 11, 1999, Pages 2427-2436

  Sali, A ^a,b   Fliyou, M ^a   Roubi, L ^a,b   Loumrhari, H ^a,c  

^a MOULAY ISMAIL UNIVERSITY   (Morocco)

^b FACULTÉ DES SCIENCES   (Morocco)

^c Département de Mathématiques et Informatique   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; MAGNETIC FIELD EFFECTS; PHOTOIONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

GALLIUM ALUMINUM ARSENIDE; PHOTOIONIZATION CROSS-SECTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032634174     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/11/11/013     Document Type: Article

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