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Volumn 38, Issue 2 B, 1999, Pages 989-991

Partial pressure of phosphorus and arsenic vapor measured by raman scattering

Author keywords

Annealing; Crystal growth; Partial pressure; Raman scattering; Vapor

Indexed keywords

ANNEALING; ARSENIC; CRYSTAL GROWTH; ELECTRIC PROPERTIES; PARTIAL PRESSURE; PHOSPHORUS; PRESSURE MEASUREMENT; SURFACE PROPERTIES; TEMPERATURE; THERMODYNAMIC PROPERTIES; VAPOR PRESSURE;

EID: 0032633501     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.989     Document Type: Article
Times cited : (4)

References (18)
  • 16
    • 33645039731 scopus 로고    scopus 로고
    • Ph.D. thesis, Technical University Chemnitz
    • D. Porezag: Ph.D. thesis, Technical University Chemnitz, 1997.
    • (1997)
    • Porezag, D.1
  • 18
    • 33645045721 scopus 로고    scopus 로고
    • GTT-Technologies, Gesellschaft für Technische Thermochemie und physik mbH, Kaiserstr. 100, 52134 Herzogenrath 3, Germany
    • GTT-Technologies, Gesellschaft für Technische Thermochemie und physik mbH, Kaiserstr. 100, 52134 Herzogenrath 3, Germany


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.