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Volumn 38, Issue 2 B, 1999, Pages 989-991
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Partial pressure of phosphorus and arsenic vapor measured by raman scattering
a a a,c b b |
Author keywords
Annealing; Crystal growth; Partial pressure; Raman scattering; Vapor
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Indexed keywords
ANNEALING;
ARSENIC;
CRYSTAL GROWTH;
ELECTRIC PROPERTIES;
PARTIAL PRESSURE;
PHOSPHORUS;
PRESSURE MEASUREMENT;
SURFACE PROPERTIES;
TEMPERATURE;
THERMODYNAMIC PROPERTIES;
VAPOR PRESSURE;
IN SITU RAMAN SCATTERING;
VAPOR ATMOSPHERE;
RAMAN SPECTROSCOPY;
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EID: 0032633501
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.989 Document Type: Article |
Times cited : (4)
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References (18)
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