Composition of arsenic and phosphorus vapour in different annealing geometries determined by Raman spectroscopy

Journal of Crystal Growth

Volumn 186, Issue 1-2, 1998, Pages 166-174

  Herms, M ^a,b   Roth, K ^a   Irmer, G ^a  

^a TU BERGAKADEMIE FREIBERG   (Germany)

^b Kyoto Institute of Technology   (Japan)

Author keywords

Arsenic vapour; Furnace annealing; Phosphorus vapour; Raman spectroscopy

Indexed keywords

ANNEALING; ARSENIC; COMPOSITION; FURNACES; MOLECULAR VIBRATIONS; PHOSPHORUS; PRESSURE EFFECTS; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS; VAPORS;

DOUBLE ZONE ARRANGEMENT; SINGLE ZONE ARRANGEMENT;

SEMICONDUCTOR MATERIALS;

EID: 0032027529     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00463-6     Document Type: Article

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