Buried cobalt silicide layer under thin silicon film fabricated by wafer bonding and hydrogen-induced delamination techniques

Journal of the Electrochemical Society

Volumn 146, Issue 7, 1999, Pages 2712-2716

  Zhu, Shiyang ^a   Huang, Yiping ^a   Ru, Guoping ^a   Qu, Xinping ^a   Li, Bingzong ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; COBALT ALLOYS; CURRENT VOLTAGE CHARACTERISTICS; DELAMINATION; ELECTRIC RESISTANCE MEASUREMENT; HYDROGEN; ION IMPLANTATION; NITROGEN; SEMICONDUCTING FILMS; SILICON WAFERS; SINGLE CRYSTALS;

HYDRODYNAMIC DELAMINATION; WAFER BONDING;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0032632376     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391997     Document Type: Article

References (14)

1. A. Schuppen, M. Marso, and H. Luth, IEEE Trans. Electron. Devices, ED-41, 751 (1994).
2. A. E. White, K. L. Short, K. Maex, R. Hull, Y. F. Hsieh, S. A. Audet, K. W. Goossen, D. C. Jacobson, and J. M. Poate, Nucl. Instrum. Methods, B59/60, 693 (1991).
3. A. E. White, K. L. Short, R. C. Dynes, J. P. Garno, and J. M. Gibson, Appl. Phys. Lett., 50, 95 (1987).
4. S. Mantl and H. L. Bay, Appl. Phys. Lett., 61, 267, (1988).
5. R. T. Tung, D. J. Eaglesham, F. Schrey, and J. P. Sullivan, Mater. Res. Soc. Symp. Proc., 181, 641 (1993).
6. W. G. Easter, C. A. Goodwin, C. M. Hsieh, R. H. Shanaman, S. W. Wallace, and M. J. Worrell, in Semiconductor Wafer Bonding: Science, Technology and Applications, C. E. Hunt, H. Baumgart, S. S. Iyer, T. Abe, and U. Gosele, Editors, PV 95-7, p. 19, The Electrochemical Society Proceedings Series, Pennington, NJ (1995).
7. K. Ljungberg, A. Soderbarg, A. L. Tiensuu, S. Jahansson, G. Thungstrom, and C. S. Petersson, J. Electrochem. Soc., 141, 2829 (1994).
8. B. McDonnell, S. Blackstone, R. Wilson, C. Quinn, and K. Yallup, in Semiconductor Wafer Bonding: Science Technology and Applications, C. E. Hunt, H. Baumgart, S. S. Iyer, T. Abe, and U. Gosele, Editors, PV 95-7, p. 535, The Electrochemical Society Proceedings Series, Pennington, NJ (1995).
9. D. Nayak, A. Reisman, and I. Turlik, J Electrochem. Soc., 135, 1023 (1988).
10. M. Bruel, B. Aspar, and A. J. A. Herve, Jpn. J. Appl. Phys., 36(Pt 1), 1636 (1997).
11. R. Stengl, K. L. Ahn, and U. Gosele, Jpn. J. Appl. Phys., 27, L2364 (1988).
12. W. P. Maszara, G. Goetz, A. Caviglia, and J. B. Mckitterick, J. Appl. Phys., 64, 4943 (1988).
13. P. B. Mumola, G. J. Gardpee, D. P. Mathur, and O. Siniaguine, in Semiconductor Wafer Bonding: Science, Technology and Applications, C. E. Hunt, H. Baumgart, S. S. Iyer, T. Abe, and U. Gosele, Editors, PV 95-7, p. 28, The Electrochemical Society Proceedings Series, Pennington, NJ (1995).
14. T. Yonehara, K. Sakaguchi, and N. Sato, Appl. Phys. Lett., 64, 2108 (1994).