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Volumn 14, Issue 4, 1999, Pages 1581-1588

Al-Ta bilayer as an oxidation resistant barrier for electrode structures in high dielectric constant capacitors

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CRYSTALLIZATION; DIFFUSION; ELECTRIC VARIABLES MEASUREMENT; OXIDATION RESISTANCE; PERMITTIVITY; PROBES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

EID: 0032632290     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0212     Document Type: Article
Times cited : (5)

References (11)
  • 6
    • 85038058193 scopus 로고    scopus 로고
    • U.S. Patent 5,504,041, Apr. 02 1996
    • S. R. Summerfelt, U.S. Patent 5,504,041, Apr. 02 1996.
    • Summerfelt, S.R.1
  • 10
    • 85038056767 scopus 로고    scopus 로고
    • U.S. Patent 5,625,233, Apr. 29 1997 (date filed: Jan. 13, 1995)
    • C. Cabral, Jr., E. Colgan, and A. Grill, U.S. Patent 5,625,233, Apr. 29 1997 (date filed: Jan. 13, 1995).
    • Cabral C., Jr.1    Colgan, E.2    Grill, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.