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Volumn 14, Issue 4, 1999, Pages 1581-1588
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Al-Ta bilayer as an oxidation resistant barrier for electrode structures in high dielectric constant capacitors
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
AUGER ELECTRON SPECTROSCOPY;
CRYSTALLIZATION;
DIFFUSION;
ELECTRIC VARIABLES MEASUREMENT;
OXIDATION RESISTANCE;
PERMITTIVITY;
PROBES;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
X RAY DIFFRACTION ANALYSIS;
ALUMINUM TANTALUM ALLOY;
ELECTRODE STRUCTURE;
FOUR POINT PROBE ELECTRICAL MEASUREMENT;
HIGH DIELECTRIC CONSTANT CAPACITORS;
OXIDATION RESISTANT BARRIER;
ALUMINUM ALLOYS;
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EID: 0032632290
PISSN: 08842914
EISSN: None
Source Type: Journal
DOI: 10.1557/JMR.1999.0212 Document Type: Article |
Times cited : (5)
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References (11)
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