Effect of doping level during rapid thermal processing of multilayer structures

Journal of Materials Research

Volumn 14, Issue 6, 1999, Pages 2402-2410

  Abramson, A R ^a   Nieva, P ^b   Tada, H ^a   Zavracky, P ^b   Miaoulis, I N ^a   Wong, P Y ^a  

^a TUFTS UNIVERSITY   (United States)

^b Northeastern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); HEATING; HIGH TEMPERATURE OPERATIONS; MATHEMATICAL MODELS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TEMPERATURE; THIN FILMS; TRANSPARENCY;

HEATING RATES; MULTILAYER WAFER; PARTIAL TRANSPARENCY; RAPID THERMAL PROCESSING; THIN FILM INTERFERENCE;

MULTILAYERS;

EID: 0032631681     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0323     Document Type: Article

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