Reliability study of sub-micron titanium suicide contacts

Applied Surface Science

Volumn 92, Issue , 1996, Pages 660-664

  Lin, C C ^a   Chen, W S ^a   Hwang, H L ^a   Hsu, K Y J ^a   Liou, H K ^b   Tu, K N ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DEGRADATION; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; INTERFACES (MATERIALS); RELIABILITY; SECONDARY ION MASS SPECTROMETRY; STRESSES; TESTING; TITANIUM COMPOUNDS;

IMPLANT THROUGH METAL TECHNIQUE; KELVIN BRIDGE TYPE CONTACT RESISTANCE; POLARITY; SUBMICRON DIMENSIONS; TITANIUM SILICIDE; TITANIUM TUNGSTEN;

ELECTRIC CONTACTS;

EID: 0030562137     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00314-2     Document Type: Article

References (2)

1. W.M. Loh, K. Saraswat and R.W. Dutton, IEEE Electron Device Lett. EDL-6 (1985) 105.
2. W.M. Loh, S.E. Swirhun, E. Crabbe, K. Saraswat and R.M. Swanson, IEEE Electron Device Lett. EDL-6 (1985) 441.