In-situ cleaning of SiO2-patterned GaAs surface with trisdimethylaminoarsine for selective regrowth

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 A, 1996, Pages 5964-5968

  Ortion, Jean Michel ^a   Cordier, Yvon ^a   Garcia, Jean Charles ^a   Adam, Didier ^a   Grattepain, Claude ^a  

^a THALES   (France)

Author keywords

CBE; GaAs; Interface; Selective growth; SIMS; SiO2 film; Surface cleaning; Trisdimethylaminoarsine

Indexed keywords

CARRIER DEPLETION; SELECTIVE REGROWTH; SURFACE DEOXIDATION; TRISDIMETHYLAMINOARSINE (TDMAA);

CARBON; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CONTACTS; HIGH TEMPERATURE EFFECTS; IN SITU PROCESSING; INTERFACES (MATERIALS); MORPHOLOGY; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SILICA; SURFACE CLEANING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030412909     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5964     Document Type: Article

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