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Journal of Materials Science: Materials in Electronics

Volumn 10, Issue 3, 1999, Pages 185-190

Study of the lattice strain relaxation in the Ga1-xAlxSb/GaSb system by X-ray topography and high resolution diffraction

(7) Bocchi, C a Germini, F a Franchi, S a Baraldi, A b Gennari, S b Magnanini, R b Drigo, A V c

a CNR (Italy)

b UNIVERSITY OF PARMA (Italy)

c UNIVERSITY OF PADOVA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); LATTICE VIBRATIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN; STRESS RELAXATION; X RAY CRYSTALLOGRAPHY; X RAY RADIOGRAPHY;

GALLIUM ALUMINUM ANTIMONIDE; GALLIUM ANTIMONIDE; LATTICE STRAIN RELAXATION; X RAY TOPOGRAPHY;

HETEROJUNCTIONS;

EID: 0032630023 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/A:1008987710885 Document Type: Article

Times cited : (4)

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