Characterization of GaS-passivated quantum-well laser diodes

Materials Research Society Symposium - Proceedings

Volumn 573, Issue , 1999, Pages 125-130

  Vaughn, L G ^a   Newell, T C ^b   Lester, L F ^b   Macinnes, A N ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

THERMAL RUNAWAY;

QUANTUM WELL LASERS;

EID: 0032629446     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-573-125     Document Type: Article

References (16)

1. C. H. Henry, P. M. Petrofï, R. A. Logan, and F. R. Merritt, J. Appl. Phys. 50, p. 3721-3722 (1979).
2. W. C. Tang, H. J. Rosen, P. Vettiger, and D. J. Webb, Appl. Phys. Lett. 58, p.557-559 (1991).
3. W. C. Tang, H. J. Rosen, P. Vettiger, and D. J. Webb, Appl. Phys. Lett. 59, p. 1005-1007 (1991).
4. G. J. Gerardi, F. C. Rong, E. H. Poindexter, M. Harmatz, H. Shen, and W. L. Warren, in Amorphous Insulating Thin Films, edited by J. Kanicki, W. L. Warren, R. A. B. Devine, and M. Matsumura (Mat. Res. Soc. Symp. Proc. 284, Pittsburgh, PA 1993) pp. 601-606.
5. K. Remashan and K. N. Bhat, Electron. Lett. 32, pp. 694-695 (1996).
6. G. W. Charache, S. Akram, E. W. Maby, and I. B. Bhat, IEEE Trans. Electron. Devices 44, p.1837-1842 (1997).
7. C. J. Sandroff, R. N. Nottenburg, J. C. BischofT, and R. Bhat, Appl. Phys. Lett. 51, p. 33-35 (1987).
8. C. J. Sandroff, M. S. Hegde, L. A. Farrow, R. Bhat, J. P. Harbison, and C. C. Chang, J. Appl. Phys. 67, p. 586-588 (1990).
9. N. Chand, W. S. Hobson, J. F. deJong, P. Parayanthal, and U. K. Chakrabarti, Electron. Lett. 32, p. 1595-1596 (1996).
10. A. N. Maclnnes, M. B. Power, A. R. Barren, P. P. Jenkins, and A. F. Hepp, Appl. Phys. Lett. 62, p. 711-713 (1993).
11. U.M. Tabib-Azar, S. Kang, A. N. Maclnnes, M. B. Power, A. R. Barron, P. P. Jenkins, and A. F. Hepp, Appl. Phys. Lett. 63, p. 625-627 (1993).
12. H. Kawanishi, H. Ohno, T. Morimoto, S. Kaneiwa, N. Miyauchi, H. Hayashi, Y. Akagi, Y. Nakajima, and T. Hijikata, 21" Conference on Solid State Devices and Materials, Tokyo, 1989, pp. 337-340.
13. H. Ohno, H. Kawanishi, Y. Akagi, M. Koba, and T. Hijikata, (Mat. Res. Soc. Symp. Proc. 204, Pittsburgh, PA 1991) p. 65.
14. G. Guel, E. A. Armour, S. Z. Sun, S. T. Srinivasn, K. J. Malloy, and S. D. Hersee, J. Electron. Mater. 21, p. 1051 (1992).
15. J. S. Yoo, H. H. Lee, and P. Zory, IEEE Photon. Technol. Lett. 3, p. 202-203 (1991).
16. A.N. Maclnnes, M.B. Power, and A.R. Barron, Chem. Mater. 4, p. 11-14 (1992).