Lattice strain in oxidized Si nanostructure arrays from X-ray measurements

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 365-369

  Tanaka, S ^a   Umbach, C C ^a   Shen, Q ^b   Blakely, J M ^a  

^a Cornell University   (United States)

^b Department of Obstetrics Gynecology   (United States)

Author keywords

Silicon; Silicon oxide; Stress; X ray diffraction

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ORIENTATION; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES; SILICON WAFERS; STRAIN MEASUREMENT; X RAY CRYSTALLOGRAPHY;

DIFFERENTIAL THERMAL CONTRACTION; SILICON OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032628699     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01673-3     Document Type: Article

References (10)

1. S.M. Sze, VLSI Technology, McGraw-Hill, New York, 1988.
2. D.-B, Kao, J.P. McVittie, W.D. Nix, K.C. Saraswat, IEEE Trans, Electron Devices ED-34 (1987) 1008.
3. R.B. Marcus, et al., Appl. Phys. Lett. 56 (1990) 236.
4. E.P. EerNisse, Appl. Phys. Lett. 30 (1977) 290.
5. E. Kobeta, E.A, Irene, J. Vac. Sci. Technol. B 6 (1988) 574.
6. B.E. Warren, X-ray Diffraction, Addison-Wesley, New York, 1969.
7. Q. Shen, C.C. Umbach, B. Weselak, J.M. Blakely, Phys. Rev. B 48 (1993) 17967.
8. A. Fargeix, G. Ghibaudo, J. Appl. Phys. 54 (1983) 7153.
9. C.M. Warwick, J. Mater. Sci. 26 (1991) 3817.
10. C.C Umbach, B.W. Weselak, J.M. Blakely, Q. Shen, J. Vac. Sci. Technol. B 14 (1996) 3420.