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Volumn 343-344, Issue 1-2, 1999, Pages 285-287

Boron-induced electronic states in hydrogenated amorphous silicon

Author keywords

Bonding configuration; Defect states; Density of states; Formation energy

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRONIC DENSITY OF STATES; HYDROGEN BONDS; HYDROGENATION;

EID: 0032628689     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01581-8     Document Type: Article
Times cited : (1)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.