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Volumn 343-344, Issue 1-2, 1999, Pages 285-287
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Boron-induced electronic states in hydrogenated amorphous silicon
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Author keywords
Bonding configuration; Defect states; Density of states; Formation energy
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Indexed keywords
BAND STRUCTURE;
CRYSTAL DEFECTS;
ELECTRONIC DENSITY OF STATES;
HYDROGEN BONDS;
HYDROGENATION;
FORMATION ENERGY;
AMORPHOUS SILICON;
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EID: 0032628689
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(98)01581-8 Document Type: Article |
Times cited : (1)
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References (10)
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