Theory of boron doping in-Si:H

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 4, 1997, Pages 1864-1867

  Fedders, P ^a   Drabold, D ^b  

^a WASHINGTON UNIVERSITY   (United States)

^b OHIO UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005739236     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.1864     Document Type: Article

References (14)

1. See, for example, K. Winer, R. A. Street, N. M. Johnson, and J. Walker, Phys. Rev. B 42, 3120 (1990).
2. P. Stumm, D. A. Drabold, and P. A. Fedders, J. Appl. Phys. 81, 1289 (1997).
3. S. G. Greenbaum, W. E. Carlos, and P. C. Taylor, Solid State Commun. 43, 663 (1982).
4. S. G. Greenbaum, W. E. Carlos, and P. C. Taylor, J. Appl. Phys. 56, 1874 (1984).
5. J. B. Boyce and S. E. Ready, Phys. Rev. B 38, 11 008 (1988).
6. J. B. Boyce and S. E. Ready, J. Non-Cryst. Solids 97&98, 345 (1987).
7. A. A. Demkov, J. Ortega, O. F. Sankey, and M. P. Grumbach, Phys. Rev. B 52, 1618 (1995).
8. O. F. Sankey and D. J. Niklewsk, Phys. Rev. B 40, 3979 (1989).
9. O. F. Sankey, D. A. Drabold, and G. B. Adams, Bull. Am. Phys. Soc. 36, 924 (1991).
10. Yu Zhou, Rolf Luchsinger, and Peter F. Meier, Phys. Rev. B 51, 4166 (1995).
11. P. A. Fedders and D. A. Drabold, Phys. Rev. B 53, 3841 (1996).
12. M. Stavola, S. J. Pearton, J. Lopata, and W. C. Dautremont-Smith, Appl. Phys. Lett. 50, 1086 (1987).
13. T. Zundel and J. Weber, Phys. Rev. B 39, 13 549 (1989).
14. G. D. Watkins, in Deep Centers in Semiconductors, edited by S. T. Pantelides (Gordon and Breach, New York, 1986), p. 147.