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Applied Surface Science

Volumn 142, Issue 1, 1999, Pages 418-421

Ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films prepared by metal-organic decomposition process

(3) Lin, Cheng Hsiung a Hsu, Wen Dung a Lin, I Nan a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FORCE; CURRENT DENSITY; DECOMPOSITION; ELECTRIC CONDUCTIVITY; FATIGUE OF MATERIALS; FERROELECTRIC MATERIALS; FERROELECTRICITY; LEAKAGE CURRENTS; PEROVSKITE; RAPID THERMAL ANNEALING; REMANENCE; SEMICONDUCTING LEAD COMPOUNDS;

ADDITIONAL FURNACE ANNEALING; METAL ORGANIC DECOMPOSITION; REMANENT POLARIZATION;

FILM PREPARATION;

EID: 0032628456 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(98)00680-1 Document Type: Article

Times cited : (21)

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