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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1004-1007

Pressure dependence of photoluminescence in GaAs/partially ordered GaInP interface

(4) Kobayashi, Toshihiko a Ohmae, Takashi a Uchida, Kazuo b Nakahara, Jun Ichiro c

a KOBE UNIVERSITY (Japan)

b UNIVERSITY OF ELECTRO COMMUNICATIONS (Japan)

c HOKKAIDO UNIVERSITY (Japan)

Author keywords

CuPt type ordering; Electronic structure; High pressure; III V semiconductors; Luminescence; Quantum wells

Indexed keywords

ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; PRESSURE; SEMICONDUCTING GALLIUM ARSENIDE;

EXCITATION INTENSITY; GALLIUM INDIUM PHOSPHIDE; HETEROINTERFACE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032623947 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.1004 Document Type: Article

Times cited : (4)

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