Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 320-323

  Tanaka, Tooru ^a   Yamaguchi, Toshiyuki ^b   Wakahara, Akihiro ^a   Yoshida, Akira ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b WAKAYAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Chalcopyrite structure; CuIn3Se5; CuInSe2; Thin film growth

Indexed keywords

ENERGY GAP; FILM GROWTH; MICROANALYSIS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

CHALCOPYRITE; COPPER INDIUM SELENIDE; ELECTRON PROBE MICROANALYSIS (EPMA);

SEMICONDUCTING FILMS;

EID: 0032623625     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01593-4     Document Type: Article

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