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Volumn 74, Issue 13, 1999, Pages 1845-1847

Nonalloyed high temperature ohmic contacts on Te-doped InP

(8) Ren, F a Antonell, M J b Abernathy, C R a Pearton, S J a LaRoche, J R a Cole, M W c Lothian, J R d Gedridge Jr , R W e

a UNIVERSITY OF FLORIDA (United States)

b NOKIA RESEARCH CENTER (United States)

c U S ARMY RESEARCH LABORATORY (United States)

d Multiplex Inc (United States)

e NAVAL AIR WARFARE CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; AMORPHOUS ALLOYS; ANNEALING; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR DOPING; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY;

OHMIC METALLIZATION;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032622268 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.123688 Document Type: Article

Times cited : (5)

References (10)

1
- 0004147967
- Wiley, New York
- GaInAsP Alloy Semiconductors, edited by T. P. Pearsall (Wiley, New York, 1982).
- (1982) GaInAsP Alloy Semiconductors
- Pearsall, T.P.¹

2
- 0024142352
- T. Sands, Mater. Sci. Eng., B 1, 289 (1989).
- (1989) Mater. Sci. Eng., B , vol.1 , pp. 289
- Sands, T.¹

3
- 0003672023
- Artech, Boston
- InP and Related Materials: Processing, Technology and Devices, edited by A. Katz (Artech, Boston, 1992).
- (1992) InP and Related Materials: Processing, Technology and Devices
- Katz, A.¹

4
- 0028433668
- D. G. Ivsy, D. Wang, D. Yang, R. Bruce, and G. Knight, J. Electrochem. Mater. 23, 441 (1994).
- (1994) J. Electrochem. Mater. , vol.23 , pp. 441
- Ivsy, D.G.¹ Wang, D.² Yang, D.³ Bruce, R.⁴ Knight, G.⁵

5
- 0026945568
- W. S. Tsang, F. S. Choa, M. C. Wu, Y. K. Chen, R. A. Logan, S. N. G. Chu, A. M. Sergent, P. Magill, K. C. Reichmann, and C. A. Burrus, J. Cryst. Growth 124, 716 (1992).
- (1992) J. Cryst. Growth , vol.124 , pp. 716
- Tsang, W.S.¹ Choa, F.S.² Wu, M.C.³ Chen, Y.K.⁴ Logan, R.A.⁵ Chu, S.N.G.⁶ Sergent, A.M.⁷ Magill, P.⁸ Reichmann, K.C.⁹ Burrus, C.A.¹⁰

6
- 0000481183
- S. N. G. Chu, R. A. Logan, M. Geva, and N. T. Ha, J. Appl. Phys. 78, 3001 (1995).
- (1995) J. Appl. Phys. , vol.78 , pp. 3001
- Chu, S.N.G.¹ Logan, R.A.² Geva, M.³ Ha, N.T.⁴

7
- 0007647023
- A. Katz, S. J. Pearton, and M. Geva, Appl. Phys. Lett. 59, 286 (1991).
- (1991) Appl. Phys. Lett. , vol.59 , pp. 286
- Katz, A.¹ Pearton, S.J.² Geva, M.³

8
- 0345503964
- F. Ren, S. J. Pearton, J. R. Lothian, S. N. G. Chu, R. G. Wilson, C. R. Abernathy, and S. S. Pei, Appl. Phys. 65, 2165 (1994).
- (1994) Appl. Phys. , vol.65 , pp. 2165
- Ren, F.¹ Pearton, S.J.² Lothian, J.R.³ Chu, S.N.G.⁴ Wilson, R.G.⁵ Abernathy, C.R.⁶ Pei, S.S.⁷

9
- 0344209730
- M. J. Antonell, C. R. Abernathy, V. Krishnamoorthy, R. W. Gedridge, Jr., and T. E. Haynes, J. Electron. Mater. 26, 27 (1997).
- (1997) J. Electron. Mater. , vol.26 , pp. 27
- Antonell, M.J.¹ Abernathy, C.R.² Krishnamoorthy, V.³ Gedridge R.W., Jr.⁴ Haynes, T.E.⁵

10
- 0030195015
- M. J. Antonell, C. R. Abernathy, and R. W. Gedridge, Jr., J. Cryst. Growth 164, 420 (1996).
- (1996) J. Cryst. Growth , vol.164 , pp. 420
- Antonell, M.J.¹ Abernathy, C.R.² Gedridge R.W., Jr.³

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