Tellurium doping of InP using triisopropylindium-diisopropyltellurium (TIPIn-DIPTe)

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 420-424

  Antonell, M J ^a   Abernathy, C R ^a   Gedridge, R W ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b NAVAL AIR WARFARE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; ELECTRON ENERGY LEVELS; INDIUM COMPOUNDS; INTERFACIAL ENERGY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; TELLURIUM; TELLURIUM COMPOUNDS; TEMPERATURE;

DIISOPROPYLTELLURIUM; DOPING CONCENTRATIONS; ELECTRICAL ACTIVATION; ELECTRON CONCENTRATION; INTERFACIAL ABRUPTNESS; TRIISOPROPYLINDIUM;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030195015     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01020-3     Document Type: Article

References (5)

1. E.A. Beam III and H.F. Chau, J. Crystal Growth 164 (1996) 389.
2. M. Wyers, J. Musolf, D. Marx, A. Kohl and P, Balk, J. Crystal Growth 105 (1990) 383.
3. A.R. Clawson, T.T. Vu and D.I. Elder, J. Crystal Growth 83 (1987) 211.
4. C.C. Hsu, J.S. Yuan, R.M. Cohen and G.B. Stringfellow, J. Crystal Growth 74 (1986) 535.
5. R.W. Gedridge, Jr., L.P. Sadwick, G.B. Stringfellow and C.R. Abernathy, Proc. 5th Int. Conf. on Chemical Beam Epitaxy and Related Growth Techniques, presented.