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Applied Physics Letters

Volumn 74, Issue 16, 1999, Pages 2343-2345

Mesoscopic composition fluctuations in semiconductor alloys: Effect on infrared devices

(2) Muller, M W a Sher, A b

a WASHINGTON UNIVERSITY IN ST LOUIS (United States)

b SRI INTERNATIONAL (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ENERGY GAP; ENTROPY; LATTICE CONSTANTS; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING CADMIUM COMPOUNDS; STRAIN;

ALUMINUM GALLIUM ARSENIDE; ELASTIC STRAIN; LATTICE MISMATCH; MERCURY CADMIUM TELLURIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032622104 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.123845 Document Type: Article

Times cited : (9)

References (13)

1
- 0004022593
- Plenum, New York
- A.-B. Chen and A. Sher, Semiconductor Alloys (Plenum, New York, 1995), p. 4.
- (1995) Semiconductor Alloys , pp. 4
- Chen, A.-B.¹ Sher, A.²

2
- 0021296217
- P. A. Fedders and M. W. Muller, J. Phys. Chem. Solids 43, 685 (1984); see also A.-B. Chen and A. Sher, Semiconductor Alloys (Plenum, New York, 1995), pp. 91-92.
- (1984) J. Phys. Chem. Solids , vol.43 , pp. 685
- Fedders, P.A.¹ Muller, M.W.²

3
- 0004022593
- Plenum, New York
- P. A. Fedders and M. W. Muller, J. Phys. Chem. Solids 43, 685 (1984); see also A.-B. Chen and A. Sher, Semiconductor Alloys (Plenum, New York, 1995), pp. 91-92.
- (1995) Semiconductor Alloys , pp. 91-92
- Chen, A.-B.¹ Sher, A.²

4
- 0345146708
- M. W. Muller, Phys. Rev. B 30, 6196 (1984).
- (1984) Phys. Rev. B , vol.30 , pp. 6196
- Muller, M.W.¹

5
- 0003542730
- Plenum, New York, Figs. 7.53 and 7.55
- A.-B. Chen and A. Sher, Semiconductor Alloys (Plenum, New York, 1995), p. 4, Figs. 7.53 and 7.55.
- (1995) Semiconductor Alloys , pp. 4
- Chen, A.-B.¹ Sher, A.²

6
- 0004022593
- Plenum, New York
- A.-B. Chen and A. Sher, Semiconductor Alloys (Plenum, New York, 1995), pp. 317 and 321.
- (1995) Semiconductor Alloys , pp. 317
- Chen, A.-B.¹ Sher, A.²

7
- 0003510623
- Clarendon, Oxford
- N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon, Oxford, 1979).
- (1979) Electronic Processes in Non-Crystalline Materials
- Mott, N.F.¹ Davis, E.A.²

8
- 0024767506
- A. Sher, M. A. Berding, and A.-B. Chen, J. Cryst. Growth 98, 27 (1989).
- (1989) J. Cryst. Growth , vol.98 , pp. 27
- Sher, A.¹ Berding, M.A.² Chen, A.-B.³

9
- 0031276192
- A. Nemirovsky and A. Ron, Solid-State Electron. 41, 1811 (1997).
- (1997) Solid-State Electron. , vol.41 , pp. 1811
- Nemirovsky, A.¹ Ron, A.²

10
- 0027646262
- G. M. Williams, R. E. DeWames, J. Bajaj, and E. R. Blazejewski, J. Electron. Mater. 22, 931 (1993).
- (1993) J. Electron. Mater. , vol.22 , pp. 931
- Williams, G.M.¹ DeWames, R.E.² Bajaj, J.³ Blazejewski, E.R.⁴

11
- 85034193742
- unpublished
- S. Krishnamurthy, T. N. Casselman, and A. Sher (unpublished).
- Krishnamurthy, S.¹ Casselman, T.N.² Sher, A.³

12
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- A. Sher, A. Tsigelman, E. Weiss, and N. Mainzer, J. Vac. Sci. Technol. A 8, 1093 (1990).
- (1990) J. Vac. Sci. Technol. A , vol.8 , pp. 1093
- Sher, A.¹ Tsigelman, A.² Weiss, E.³ Mainzer, N.⁴

13
- 0001641305
- J. P. Faurie, J. Reno, S. Sivananthan, I. K. Sou, X. Chu, M. Boukerche, and P. S. Wijewarnasuriya, J. Vac. Sci. Technol. A 4, 2067 (1986).
- (1986) J. Vac. Sci. Technol. A , vol.4 , pp. 2067
- Faurie, J.P.¹ Reno, J.² Sivananthan, S.³ Sou, I.K.⁴ Chu, X.⁵ Boukerche, M.⁶ Wijewarnasuriya, P.S.⁷

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