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1
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0031094418
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Simple compact diode-laser/microlens packaging
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Z. L. Liau, D. Z. Tsang, and J. N. Walpole, “Simple compact diode-laser/microlens packaging,” IEEE J. Quantum Electron. 33, 457-461 (1997).
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Liau, Z.L.1
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Walpole, J.N.3
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2
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0344954389
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GaInAsP/InP buried-heterostructure surface-emitting diode laser with monolithic integrated bifocal microlens
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Z. L. Liau, J. N. Walpole, L. J. Missaggia, and D. E. Mull, “GaInAsP/InP buried-heterostructure surface-emitting diode laser with monolithic integrated bifocal microlens,” Appl. Phys. Lett. 56, 1219-1221 (1990).
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Liau, Z.L.1
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Mull, D.E.4
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3
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0028442619
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Accurate fabrication of anamorphic microlenses and efficient collimation of tapered unstable-resonator diode lasers
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Z. L. Liau, J. N. Walpole, D. E. Mull, C. L. Dennis, and L. J. Missaggia, “Accurate fabrication of anamorphic microlenses and efficient collimation of tapered unstable-resonator diode lasers,” Appl. Phys. Lett. 64, 3368-3370 (1994).
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Liau, Z.L.1
Walpole, J.N.2
Mull, D.E.3
Dennis, C.L.4
Missaggia, L.J.5
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4
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0029409493
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Fabrication of two-sided anamorphic microlenses and direct coupling of tapered highpower diode laser to single-mode fiber
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Z. L. Liau, J. N. Walpole, J. C. Livas, E. S. Kintzer, D. E. Mull, L. J. Missaggia, and W. F. DiNatale, “Fabrication of two-sided anamorphic microlenses and direct coupling of tapered highpower diode laser to single-mode fiber,” IEEE Photon. Technol. Lett. 7, 1315-1317 (1995).
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Liau, Z.L.1
Walpole, J.N.2
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Kintzer, E.S.4
Mull, D.E.5
Missaggia, L.J.6
Dinatale, W.F.7
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5
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22944472810
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Surface-energy-induced mass-transport phenomenon in annealing of etched compound semiconductor structures: Theoretical modeling and experimental confirmation
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Z. L. Liau and H. J. Zeiger, “Surface-energy-induced mass-transport phenomenon in annealing of etched compound semiconductor structures: theoretical modeling and experimental confirmation,” J. Appl. Phys. 67, 2434-2440 (1990).
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Liau, Z.L.1
Zeiger, H.J.2
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6
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0038275981
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Large-numerical-aperture InP lenslets by mass transport
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Z. L. Liau, V. Diadiuk, J. N. Walpole, and D. E. Mull, “Large-numerical-aperture InP lenslets by mass transport,” Appl. Phys. Lett. 52, 1859-1861 (1988).
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Liau, Z.L.1
Diadiuk, V.2
Walpole, J.N.3
Mull, D.E.4
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7
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0012055243
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Gallium phosphide microlenses by mass transport
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Z. L. Liau, V. Diadiuk, J. N. Walpole, and D. E. Mull, “Gallium phosphide microlenses by mass transport,” Appl. Phys. Lett. 55, 97-99 (1989).
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Liau, Z.L.1
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Walpole, J.N.3
Mull, D.E.4
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8
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0029277425
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Enhanced mass-transport smoothing of f/0.7 microlenses by use of sealed ampoules
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J. S. Swenson, R. A. Fields, and M. H. Abraham, “Enhanced mass-transport smoothing of f/0.7 microlenses by use of sealed ampoules,” Appl. Phys. Lett. 66, 1304-1306 (1995).
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Swenson, J.S.1
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9
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0028385085
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Large-numerical-aperture microlens fabrication by one-step etching and mass-transport smoothing
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Z. L. Liau, D. E. Mull, C. L. Dennis, and R. C. Williamson, “Large-numerical-aperture microlens fabrication by one-step etching and mass-transport smoothing,” Appl. Phys. Lett. 64, 1484-1486 (1994).
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Liau, Z.L.1
Mull, D.E.2
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Williamson, R.C.4
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10
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85010131585
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Investigation of chemically assisted ion beam etching for the fabrication of vertical, ultrahigh quality facets in GaAs
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M. Hagberg, B. Jonsson, and A. G. Larsson, “Investigation of chemically assisted ion beam etching for the fabrication of vertical, ultrahigh quality facets in GaAs,” J. Vac. Sci. Technol. B 12, 555-566 (1994).
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Hagberg, M.1
Jonsson, B.2
Larsson, A.G.3
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11
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0028538209
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Tolerances in microlens fabrication by multilevel etching and mass-transport smoothing
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Z. L. Liau, D. W. Nam, and R. G. Waarts, “Tolerances in microlens fabrication by multilevel etching and mass-transport smoothing,” Appl. Opt. 33, 7371-7376 (1994).
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Appl. Opt.
, vol.33
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Liau, Z.L.1
Nam, D.W.2
Waarts, R.G.3
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12
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0038547301
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Characterization of etch rate and anisotropy in the temperature-controlled chemically assisted ion beam etching of GaAs
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W. J. Grande, J. E. Johnson, and C. L. Tang, “Characterization of etch rate and anisotropy in the temperature-controlled chemically assisted ion beam etching of GaAs,” J. Vac. Sci. Technol. B 8, 1075-1079 (1990).
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Grande, W.J.1
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13
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0001229011
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Characterization of chemically assisted ion beam etching of InP
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C. Youtsey, R. Grundbacher, R. Panepucci, I. Adesida, and C. Caneau, “Characterization of chemically assisted ion beam etching of InP,” J. Vac. Sci. Technol. B 12, 3317-3321 (1994).
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Youtsey, C.1
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Caneau, C.5
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