Light-induced mobility enhancement in delta-doped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)

Applied Physics Letters

Volumn 74, Issue 14, 1999, Pages 2026-2028

  Zervos, M ^a   Elliott, M ^a   Westwood, D I ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ENERGY GAP; HALL EFFECT; HETEROJUNCTIONS; PHOTOCONDUCTIVITY; PHOTOIONIZATION; RADIATION EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SHUBNIKOV-DE HAAS EFFECT;

DELTA DOPING; PERSISTENT PHOTOCONDUCTIVITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032621869     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123745     Document Type: Article

References (8)

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