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Volumn 52, Issue 15, 1988, Pages 1237-1239

Reduction in the concentration of DX centers in Si-doped GaAlAs using the planar doping technique

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EID: 36549103776     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.99167     Document Type: Article
Times cited : (40)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.