Comparison of MOCVD and MBE semiconductor superlattices for the evaluation of depth resolution in AES and SIMS

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 508-512

  Furuya, M ^a   Soga, M ^a   Takano, H ^b  

^a KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^b Kanagawa High Technology Foundation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CALCULATIONS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; OPTICAL RESOLVING POWER; OPTIMIZATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

DEPTH PROFILE ANALYSIS; DEPTH RESOLUTION; SUPERLATTICE STRUCTURE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030564556     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00329-7     Document Type: Article

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