Effect of oxygen on the bias-enhanced nucleation of diamond on silicon

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 160-165

  Schreck, M ^a   Thurer K H ^a   Christensen, C ^a   Muller M ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Bias enhanced nucleation; Diamond; Heteroepitaxy; Oxygen impurities

Indexed keywords

CARBON DIOXIDE; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; ELECTRIC FIELDS; EPITAXIAL GROWTH; ETCHING; FILM GROWTH; MICROWAVES; NUCLEATION; OXYGEN; PLASMA APPLICATIONS; SILICON WAFERS;

BIAS-ENHANCED NUCLEATION; HETEROEPITAXIAL GROWTH; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION (MPCVD);

DIAMOND FILMS;

EID: 0032621072     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00301-x     Document Type: Article

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