RHEED and AFM studies of homoepitaxial diamond thin film on C(001) substrate produced by microwave plasma CVD

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 701-704

  Takami, T ^a,b   Suzuki, K ^a   Kusunoki, I ^a,b   Sakaguchi, I ^b   Nishitani Gamo, M ^b   Ando, T ^b,c  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Atomic force microscopy; CVD; Homoepitaxy; Reflection high energy electron diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FILM GROWTH; FOURIER TRANSFORMS; MICROWAVES; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE STRUCTURE; THIN FILMS;

HOMOEPITAXIAL GROWTH; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION (MPCVD);

DIAMOND FILMS;

EID: 0032615541     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00391-4     Document Type: Article

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