Void nucleation on intentionally added defects in Al interconnects

Applied Physics Letters

Volumn 75, Issue 5, 1999, Pages 633-635

  Doan, J C ^a   Lee, S H ^a   Bravman, J C ^a   Flinn, P A ^a   Marieb, T N ^b  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DEFECTS; ELECTROMIGRATION; ION IMPLANTATION; NUCLEATION; PASSIVATION; PRECIPITATION (CHEMICAL); STRESSES;

VOIDS;

OPTICAL INTERCONNECTS;

EID: 0032615170     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124464     Document Type: Article

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