One-dimensional effects in quantum wires made from a double heterojunction based on the AlAs/GaAs system

Journal of Applied Physics

Volumn 86, Issue 3, 1999, Pages 1492-1498

  Sander, T H ^a,b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b CHARITÉ UNIVERSITÄTSMEDIZIN BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; ETCHING; FERMI LEVEL; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES;

ALUMINUM ARSENIDE; FERMI WAVE VECTOR; MAGNETIC DEPOPULATION; WET CHEMICAL ETCHING;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032614899     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370919     Document Type: Article

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