Enhanced electron mobility in novel side-gated quantum wire structures

Semiconductor Science and Technology

Volumn 11, Issue 7, 1996, Pages 1065-1069

  Wirner, C ^a   Momose, H ^a   Hamaguchi, C ^a   Smoliner, J ^b   Kock A ^b   Gornik, E ^b  

^a OSAKA UNIVERSITY   (Japan)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DENSITY MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING GALLIUM COMPOUNDS;

ELECTRON GAS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0030196304     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/7/017     Document Type: Article

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