Maximum entropy principle for hydrodynamic transport in semiconductor devices

Journal of Applied Physics

Volumn 85, Issue 8 I, 1999, Pages 4050-4065

  Trovato, M ^a   Reggiani, L ^b  

^a UNIVERSITY OF CATANIA   (Italy)

^b INFM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER AIDED DESIGN; ENTROPY; HEAT FLUX; HYDRODYNAMICS; MONTE CARLO METHODS; SEMICONDUCTING SILICON;

MAXIMUM ENTROPY PRINCIPLE (MEP);

SEMICONDUCTOR DEVICES;

EID: 0032613775     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370310     Document Type: Article

References (52)

1. K. Blotekjaer, IEEE Trans. Electron Devices 17, 38 (1970).
2. G. Baccarani and M. R. Wordeman, Solid-State Electron. 28, 407 (1985).
3. M. Rudan and F. Odeh, COMPEL 5, 149 (1986).
4. A. Forghieri, R. Guerrieri, P. Ciampolini, A. Gnudi, M. Rudan, and G. Baccarani, IEEE Trans. Comput.-Aided Des. 7, 231 (1988).
5. D. L. Woolard, H. Tian, R. J. Trew, M. A. Littlejohn, and W. Kim, Phys. Rev. B 44, 11119 (1991).
6. R. Thoma, A. Emunds, B. Meinerzhagen, H. J. Peifer, and W. L. Engl, IEEE Trans. Electron Devices 38, 1343 (1991).
7. A. M. Anile and O. Muscato, Phys. Rev. B 51, 16728 (1995).
8. U. Ravaioli, Semicond. Sci. Technol. 13, 1 (1998).
9. P. Falsaperla and M. Trovato, A hydrodynamic model for transport in semiconductors without free parameters, Proceedings of IWCE-5, VLSI Design (in press).
10. M. Trovato and P. Falsaperla, Phys. Rev. B 57, 4456 (1998); 57, 12617 (E) (1998).
11. M. Trovato and P. Falsaperla, Phys. Rev. B 57, 4456 (1998); 57, 12617 (E) (1998).
12. M. Trovato and P. Falsaperla, Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 98, 320, edited by K. De Meyer and S. Biesemans (Springer, Wien, 1998).
13. S. C. Lee and T. W. Tang, Solid-State Electron. 35, 561 (1992).
14. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. 55, 645 (1983).
15. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation (Springer, Vienna, 1989).
16. M. Fischetti and S. Laux, Phys. Rev. B 48, 2244 (1993).
17. M. Rudan, M. Vecchi and D. Ventura, Mathematical Problems in Semiconductor Physics of Pitman Research Notes, in Mathematical Series, edited by P. Marcati, P. Markowich, and R. Natalini (Longmans, Green, NY, 1995), p. 186.
18. M. A. Stettler, M. A. Alam, and M. S. Lundstrom, IEEE Trans. Electron Devices 40, 733 (1993).
19. A. Leone, A. Gnudi, and G. Baccarani, IEEE Trans. Comput.-Aided Des. of Integr. Circ. Syst. 13, 231 (1994).
20. M. Shur, Electron. Lett. 12, 615 (1976).
21. W. Hansch and M. Miura-Mattausch, J. Appl. Phys. 60, 650 (1986).
22. W. Hansch, The Drift Diffusion Equation and its Application to MOSFET Modeling, series in Computational Microelectronics (Springer, Berlin, 1991).
23. S. C. Lee and T. W. Tang, Computational Electronics. Semiconductor Transport and Device Simulation, edited by K. Hess, J. P. Leburton, and U. Ravaioli (Kluwer, Boston, 1991), p 127.
24. I. Müller and T. Ruggeri, Extended Thermodynamics (Springer, Berlin, 1993).
25. W. Dreyer, J. Phys. A 20, 6505 (1987).
26. E. T. Jaynes, Phys. Rev. 106, 620 (1957).
27. M. Tribus, Thermostatics and Thermodynamics (Van Nostrand, Princeton, 1961).
28. E. T. Jaynes, Statistical Physics, edited by W. K. Ford (Benjamin, New York, 1963).
29. D. N. Zubarev, Nonequilibrium Statistical Mechanics (Plenum, London, 1974).
30. W. T. Grandy, Phys. Rep. 62, 175 (1980); F. Schlogl, ibid. 62, 267 (1980).
31. W. T. Grandy, Phys. Rep. 62, 175 (1980); F. Schlogl, ibid. 62, 267 (1980).
32. E. T. Jaynes, Papers on Probability, Statistics, and Statistical Physics, edited by R.D. Rosenkrantz (Reidel, Dordrecht, 1983).
33. D. A. Drabold, A. E. Carlsson, and P. A. Fedders, in Maximum Entropy and Bayesian Methods, edited by J. Skilling (Cambridge, England, 1988), p. 127.
34. D. Jou, J. Casas-Vasquez, and G. Lebon, Extended Irreversible Thermodynamics (Springer, Berlin, 1993).
35. I.V. Karlin, A.N. Gorban, S. Succi, and V. Boffi, Phys. Rev. Lett. 81, 6 (1998).
36. L. R. Mead and N. Papanicolaou, J. Math. Phys. 25, 2404 (1984).
37. V. Gruzhinskis, E. Starikov, and P. Shiktorov, Solid-State Electron. 36, 1055 (1993).
38. V. Gruzhinskis, E. Starikov, and P. Shiktorov, Solid-State Electron. 36, 1067 (1993).
39. A. M. Anile and M. Trovato, Phys. Lett. A 230, 387 (1997).
40. N. Agmon, Y. Alhassid, and R. D. Levine, J. Comput. Phys. 30, 250 (1979).
41. R. H. Brown and A. E. Carlsson, Phys. Rev. B 32, 6125 (1985).
42. A. E. Carlsson and P. Fedders, Phys. Rev. B 34, 3567 (1986).
43. S. A. Trugman, Phys. Rev. Lett. 57, 607 (1986).
44. A. E. Carlsson, Phys. Rev. Lett. 59, 1108 (1987).
45. O. Muscato, Progress in Industrial Mathematics at ECMI 96, edited by M. Brøns, M. P. Bendøe, and M. P. Sørensen (Teubner, Stuttgart, 1997), p. 192.
46. K. Tomizava, Numerical Simulation of Submicron Semiconductor Devices (Artech House, Boston, 1993).
47. V. Gruzhinskis, E. Starikov, P. Shiktorov, L. Reggiani, M. Saranniti, and L. Varani, Semicond. Sci. Technol. 8, 1283 (1993).
48. L. Reggiani, E. Starikov, P. Shiktorov, V. Gruzhinskis, and L. Varani, Semicond. Sci. Technol. 12, 141 (1997).
49. S. Pennisi and M. Trovato, Continuum Mech. Thermodyn. 7, 489 (1995).
50. M. Trovato, Ph.D. thesis, Catania University, 1998.
51. S. Pennisi and M. Trovato, Int. J. Eng. Sci. 25, 1059 (1987).
52. C. Truesdell and R. G. Muncaster, Fundamentals of Maxwell's Kinetic Theory of a Simple Monoatomic Gas, edited by S. Eilenberg and H. Bass (Academic, New York, 1980).