A hydrodynamic model for transport in semiconductors without free parameters

VLSI Design

Volumn 8, Issue 1-4, 1998, Pages 527-532

  Falsaperla, P ^a   Trovato, M ^a  

^a NONE

Author keywords

Electron transport; Entropy maximum principle; Submicron devices

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; ENTROPY; FUNCTIONS; HYDRODYNAMICS; INTEGRATED CIRCUIT LAYOUT; MAXIMUM PRINCIPLE; SEMICONDUCTOR DEVICE MODELS;

SUBMICRON DEVICES;

VLSI CIRCUITS;

EID: 0032312783     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/97416     Document Type: Article

References (8)

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