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Volumn 38, Issue 1 B, 1999, Pages 372-375

Several- and Many-Electron Artificial-Atoms at Filling Factors between 2 and 1

Author keywords

Artificial atom; Coulomb blockade; Double barrier resonant tunneling structure; Maximum density droplet; Quantum dot; Quantum Hall effect; Single electron transistor

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRON TUNNELING; ELECTROSTATICS; HALL EFFECT; NANOTECHNOLOGY; POLARIZATION; QUANTUM THEORY; SEMICONDUCTOR DEVICE STRUCTURES; TRANSISTORS;

EID: 0032608294     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.372     Document Type: Article
Times cited : (15)

References (20)
  • 19
    • 0348222823 scopus 로고    scopus 로고
    • private communication
    • K. Muraki: private communication.
    • Muraki, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.