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Volumn 38, Issue 1 B, 1999, Pages 372-375
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Several- and Many-Electron Artificial-Atoms at Filling Factors between 2 and 1
a a a a,c b b b b |
Author keywords
Artificial atom; Coulomb blockade; Double barrier resonant tunneling structure; Maximum density droplet; Quantum dot; Quantum Hall effect; Single electron transistor
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Indexed keywords
ELECTRIC CONDUCTANCE;
ELECTRON TUNNELING;
ELECTROSTATICS;
HALL EFFECT;
NANOTECHNOLOGY;
POLARIZATION;
QUANTUM THEORY;
SEMICONDUCTOR DEVICE STRUCTURES;
TRANSISTORS;
ARTIFICIAL ATOMS;
COULOMB BLOCKADE;
QUANTUM HALL EFFECT;
SINGLE ELECTRON TRANSISTORS (SET);
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0032608294
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.38.372 Document Type: Article |
Times cited : (15)
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References (20)
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