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Volumn 75, Issue 2, 1999, Pages 220-222

High-quality highly strained InGaAs quantum wells grown on InP using (InAs)n(GaAs)0.25 fractional monolayer superlattices

(5) Jourba, S a Gendry, M a Marty, O b Pitaval, M b Hollinger, G a

a CNRS (France)

b UNIVERSITÉ LYON 1 (France)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; MONOLAYERS; RELAXATION PROCESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES;

FRACTIONAL MONOLAYER SUPERLATTICES (FMS); INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032608123 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.124328 Document Type: Article

Times cited : (13)

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